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IMAGE SENSOR
CCD area image sensor
S7199-01
Front-illuminated FFT-CCDs for X-ray imaging
S7199-01 is a family of FFT-CCD image sensors specifically designed for X-ray imaging. FOS (Fiber Optic plate with Scintillator) that converts X-ray into visible-light is mounted on a CCD chip, which enables S7199-01 to acquire the X-ray imaging. Two CCD chips of symmetric from side to side are mounted closely for realizing the possible minimum dead space in between. The effective photosensitive length of about 150 mm in total is realized; each chip has 1536 x 128 channels, and 48 x 48 m is a pixel size. Even a X-ray image of moving object can be taken by taking a unique operation method of TDI, which can also be useful for a non-destructive inspection where the object moves on a belt conveyer. The each chip of S7199-01 has an effective pixel size of 48 x 48 m and is available in active area of 73.728 (H) x 6.144 (V) mm2. S7199-01 is pin compatible with S7199. (Operating condition is a little bit changed from S7199)
Features
Applications
l 1536 (H) x 128 (V) pixel format l Pixel size: 48 x 48 m l Buttable structure of 2 chips l Coupled with FOS for X-ray imaging l TDI (Time Delay Integration) operation l 100 % fill factor l Wide dynamic range l Low dark signal l Low readout noise l MPP operation
s Selection guide
Type No. Cooling S7199-01 Non-cooled Note) As an input window, FOS is suited to S7199-01.
l General X-ray imaging l Non-destructive inspection l Dental panorama
Number of total pixels 1536 x 128
Number of active pixels 1536 x 128
Active area [mm (H) x mm(V)] 73.728 x 6.144
s General ratings
Parameter CCD structure Fill factor Number of active pixels Pixel size CCD active area X-ray sensitive area Vertical clock phase Horizontal clock phase Output circuit X-ray resolution Reliability Package Window *1: Number of active pixels per chip. Two chips are used. Specification Full frame transfer or TDI 100 % 1536 (H) x 128 (V) *1 48 (H) x 48 (V) m 73.728 (H) x 6.144 (V) mm *1 146 x 6 mm 2 phase 2 phase Two-stage MOSFET source follower with load resistance 4 to 6 Lp/mm at 60 kVp, 10 m Roentgen 100,000 shots at 60 kVp, 10 m Roentgen 40 pin ceramic package FOS (Fiber Optic plate with Scintillator)
1
CCD area image sensor
s Absolute maximum ratings (Ta=25 C)
Parameter Storage temperature Operating temperature OD voltage RD voltage ISV voltage IGV voltage IGH voltage SG voltage OG voltage RG voltage TG voltage Vertical clock voltage Horizontal clock voltage Symbol Tstg Topr VOD VRD VISV VIGV VIGH VSG VOG VRG VTG VP1AV, VP2AV VP1BV, VP2BV VP1AH, VP2AH VP1BH, VP2BH Min. -20 0 -0.5 -0.5 -0.5 -15 -15 -15 -15 -15 -15 -15 -15 Typ. Max. +70 +40 +20 +18 +18 +15 +15 +15 +15 +15 +15 +15 +15
S7199-01
Unit C C V V V V V V V V V V V
s Operating conditions (MPP mode, Ta=25 C)
Parameter Output transistor drain voltage Reset drain voltage Output gate voltage Output transistor ground voltage Substrate voltage Vertical input source Test point Vertical input gate Horizontal input gate Vertical shift register clock voltage High Low High Low High Low High Low High Low Symbol VOD VRD VOG VSSA VSSD VISV VIGV VIGH VP1AVH, VP2AVH VP1BVH, VP2BVH VP1AVL, VP2AVL VP1BVL, VP2BVL VP1AHH, VP2AHH VP1BHH, VP2BHH VP1AHL, VP2AHL VP1BHL, VP2BHL VSGH VSGL VRGH VRGL VTGH VTGL Min. 12 12 -0.5 -5 -8 -8 0 -9 0 -9 0 -9 0 -9 0 -9 Typ. 15 13 2 0 0 VRD 0 0 3 -8 3 -8 3 -8 3 -8 3 -8 Max. 14 5 6 V -7 6 V -7 6 -7 6 -7 6 -7 V V V Unit V V V V V V
Horizontal shift register clock voltage Summing gate voltage Reset gate voltage Transfer gate voltage
s Electrical characteristics (Ta=25 C)
Symbol fc frg CP1AV, CP2AV Vertical shift register capacitance CP1BV, CP2BV CP1AH, CP2AH Horizontal shift register capacitance CP1BH, CP2BH Summing gate capacitance CSG Reset gate capacitance CRG Transfer gate capacitance CTG Transfer efficiency CTE DC output level Vout Output impedance Zo Power dissipation P *2: Measured at half of the full well capacity. CTE is defined per *3: VOD=15 V. *4: Power dissipation of the on-chip amplifier (each chip). Parameter Signal output frequency Reset clock frequency Remark Min. 0.99995 5 Typ. 2 2 15000 500 15 10 500 0.99999 8 500 60 Max. 4 4 11 Unit MHz MHz pF pF pF pF pF V mW
* 3 * 3 * 3, 4 ** pixel.
2
2
CCD area image sensor
s Electrical and optical characteristics (Ta=25 C, unless otherwise noted)
S7199-01
Unit V keV/eke-/pixel/s e-rms % Lp/mm
Parameter Symbol Remark Min. Typ. Max. Saturation output voltage Vsat Fw x Sv Vertical 600 1200 Full well capacity Horizontal Fw 600 1200 Summing 600 1200 CCD node sensitivity Sv *2 0.45 0.6 Dark current (MPP mode) DS *3 8 24 Readout noise Nr *4 60 120 Dynamic range DR *5 5000 20000 X-ray response non-uniformity XRNU *6, *7 10 30 White spots 10 Point defects *8 Black spots 10 Blemish Cluster defects *9 0 Column defects *10 0 X-ray resolution 4 6 R *2: VOD=15 V. *3: Dark current doubles for every 5 to 7 C. *4: -40 C, operating frequency is 2 MHz. *5: Dynamic range = Full well capacity / Readout noise *6: X-ray irradiation of 60kVp, measured at half of the full well capacity. *7: XRNU (%) = Noise / Signal x 100 Noise: Fixed pattern noise (peak to peak) Measuring region that is within 146.0 mm (H) x 6.0 mm (V) (refer to dimensional outline) *8: White spots > 20 times of typ. dark signal (8 ke-/pixel/s). Black spots > 50 % reduction in response relative to adjacent pixels, measured at half of the full well capacity. *9: continuous 2 to 9 point defects. *10: continuous >10 point defects.
s Resolution
1.0 0.9 (X-ray source: 60 kVp)
s Response
1000 (X-ray source: 70 kVp)
0.7 0.6
0.5 0.4 0.3 0.2 0.1 0 0 1 2 3 4 5 6 7 8 9 10
OUTPUT VOLTAGE (mV)
0.8
CTF
500
0
0
1
2
3
4
SPACIAL FREQUENCY (Line pair/mm)
KMPDB0248EA
X-RAY EXPOSURE (mR)
KMPDB0249EA
3
CCD area image sensor
s Device structure
ISV A14 IGV A15
1 2 3 4 ...... 125 126127 128 2 3 4 5 6
S7199-01
LEFT CHIP
RIGHT CHIP B20 ISV B19 IGV
6 5 4 3 2 1 2 3 4 ...... 125 126127 128
P1BV A16 P2BV A17 P1AV A18 P2AV A19 TG A20 RG RD SSA OS OD OG SG A1 A2 A3 A4 A5 A6 A7
B18 P1BV B17 P2BV B16 P1AV B15 P2AV B14 TG B13 RG B12 RD B11 SSA B10 OS B9 OD B8 OG SG
1531 1532 1533 1534 1535 1536
S1531 S1532 S1533 S1534 S1535 S1536
S1 S2 S3 S4 S5 S6
A8 P2AH
A9 P1AH
A10 SSD
A11 A12 A13 P2BH P1BH IGH
B1 B2 B3 IGH P1BH P2BH
B4 SSD
S6 S5 S4 S3 S2 S1
......
S1536 S1535 S1534 S1533 S1532 S1531
1536 1535 1534 1533 1532 1531
......
...... ......
B5 P1AH
B6 P2AH
B7
S1, ... , S1536: ACTIVE ELEMENTS
S1, ... , S1536: ACTIVE ELEMENTS
KMPDC0110EA
s Pixel format
Blank 0 Optical black 0 Left Horizontal Direction Effective 1536 Right Optical black 0 Blank 0 Isolation 0 Isolation 0
Top Vertical direction Bottom Isolation Effective Isolation 0 128 0
s Timing chart (TDI operation)
Tpwv P1AV, P1BV P2AV, P2BV TG P1AH, P1BH
P2AH, P2BH SG RG OS ENLARGED VIEW Tovr TG P1AH, P1BH Tpwh, Tpws
P2AH, P2BH SG RG OS S1 S2 S3 S4 S5 S1535 S1536
KMPDC0142EB
Tpwr
4
CCD area image sensor
s Timing chart (TDI operation, 2 x 2 pixel binning)
Tpwv P1AV, P1BV P2AV, P2BV TG P1AH, P1BH
S7199-01
P2AH, P2BH SG RG OS ENLARGED VIEW Tovr TG P1AH, P1BH Tpwh, Tpws
P2AH, P2BH SG RG OS S1 + S2 S3 + S4 S1535 + S1536
KMPDC0111EC
Tpwr
Parameter Symbol Remark Pulse width tpwv 14, 15 ** Rise and fall time tprv, tpfv Pulse width tpwh P1AH, P1BH, Rise and fall time tprh, tpfh *15 P2AH, P2BH Duty ratio Pulse width tpws SG Rise and fall time tprs, tpfs Duty ratio Pulse width tpwr RG Rise and fall time tprr, tpfr TG-P1AH, P1BH Overlap time tovr *14: TG terminal can be short-circuited to P2AV terminal. *15: Symmetrical pulses should be overlapped at 50 % of maximum amplitude. P1AV, P1BV, P2AV, P2BV, TG
Min. 30 200 125 10 125 10 10 5 10
Typ. 60 250 50 250 50 50 20
Max. -
Unit s ns ns ns % ns ns % ns ns s
5
CCD area image sensor
s Dimensional outline (unit: mm)
( )
50 m MAX.
S7199-01
LEFT CHIP EDGE PIXEL
RIGHT CHIP
DEAD SPACE: 130 to 200 m FOP 150.0 0.2 X-RAY SENSITIVE AREA: 146.0 (H) x 6.0 (V) 149.5 0.5 75.0 0.4 30.48 0.5 30.48 0.5 75.0 0.4 FOP 3.0 1.6
5.6
12.7 0.7 * 12.7 0.7 * 25.4
28.0 0.3
A20 A14
FOP 7.2
B20 B14
A1
A13
B1
B13 3.4
22.86 0.5 22.86 0.5
SCINTILLATOR
0.45
2.54
* Distance between the center of active area and the I/O pins
KMPDA0129EA
6
CCD area image sensor
s Pin connections
Pin No. A1 A2 A3 A4 A5 A6 A7 A8 A9 A10 A11 A12 A13 A14 A15 A16 A17 A18 A19 A20 B1 B2 B3 B4 B5 B6 B7 B8 B9 B10 B11 B12 B13 B14 B15 B16 B17 B18 B19 B20 Symbol RG RD SSA OS OD OG SG P2AH P1AH SSD P2BH P1BH IGH ISV IGV P1BV P2BV P1AV P2AV TG IGH P1BH P2BH SSD P1AH P2AH SG OG OD OS SSA RD RG TG P2AV P1AV P2BV P1BV IGV ISV Description Reset gate Reset drain Analog ground Output transistor source Output transistor drain Output gate Summing gate CCD horizontal register clock A-2 CCD horizontal register clock A-1 Digital ground CCD horizontal register clock B-2 CCD horizontal register clock B-1 Test point (Horizontal input gate) Test point (Vertical input source) Test point (Vertical input gate) CCD vertical register clock B-1 CCD vertical register clock B-2 CCD vertical register clock A-1 CCD vertical register clock A-2 Transfer gate Test point (Horizontal input gate) CCD horizontal register clock B-1 CCD horizontal register clock B-2 Digital ground CCD horizontal register clock A-1 CCD horizontal register clock A-2 Summing gate Output gate Output transistor drain Output transistor source Analog ground Reset drain Reset gate Transfer gate CCD vertical register clock A-2 CCD vertical register clock A-1 CCD vertical register clock B-2 CCD vertical register clock B-1 Test point (Vertical input gate) Test Point (Vertical input source)
S7199-01
Remark
Same timing as P2AH Same timing as P1AH Shorted to RD Same timing as P1AV Same timing as P2AV
Same timing as P1AH Same timing as P2AH
Same timing as P2AV Same timing as P1AV Shorted to RD
s Precautions for use (Electrostatic countermeasures)
* Handle these sensors with bare hands or wearing cotton gloves. In addition, wear anti-static clothing or use a wrist band with an earth ring, in order to prevent electrostatic damage due to electrical charges from friction. * Avoid directly placing these sensors on a work-desk or work-bench that may carry an electrostatic charge. * Provide ground lines or ground connection with the work-floor, work-desk and work-bench to allow static electricity to discharge. * Ground the tools used to handle these sensors, such as tweezers and soldering irons. It is not always necessary to provide all the electrostatic measures stated above. Implement these measures according to the amount of damage that occurs.
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. (c)2007 Hamamatsu Photonics K.K.
HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184, www.hamamatsu.com
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Smidesvagen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Cat. No. KMPD1077E07 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
Aug. 2007 DN
7

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